A New Description of MOS Circuits at Switch-Level with Applications (Special Section on VLSI Design and CAD Algorithms)

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概要

• 論文の詳細を見る

• After analyzing the limitations of the traditional description of CMOS circuits at the gate level, this paper introduces the notions of switching and signal variables for describing the switching states of MOS transistors and signals in CMOS circuits, respectively. Two connection operations for describing the interaction between MOS transistors and signals and a new description for MOS circuits at the switch level are presented. This new description can be used to express the functional relationship between inputs and the output at the switch level. It can also be used to describe the circuit structure composed of MOS switches. The new description can be effectively used to design both CMOS circuits and nMOS pass transistor circuits.

• 社団法人電子情報通信学会の論文
• 1997-10-25

著者

• Pedram M

  The Department Of Electrical Engineering-systems University Of Southern California

• PEDRAM Massoud

  the Department of Electrical Engineering-Systems, University of Southern California

• WU Xunwei

  the Department of Electronic Engineering, Hangzhou University

• Pedram Massoud

  The Department Of Electrical Engineering-systems University Of Southern California

• Wu Xunwei

  The Department Of Electronic Engineering Hangzhou University:(present Address)university Of Southern

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• Vector Compaction Using Dynamic Markov Models (Special Section on VLSI Design and CAD Algorithms)
• A New Description of MOS Circuits at Switch-Level with Applications (Special Section on VLSI Design and CAD Algorithms)

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