The Effect of Internal Parasitic Capacitances in Series-Connected MOS Structure
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概要
- 論文の詳細を見る
A simple method is presented to calculate the parasitic capacitance effect in the propagation delay of series-connected MOS (SCM) structures. This method divides SCM circuits into two parts and accurately calculates the contribution of each part to the difference from the delay without parasitic capacitances.
- 社団法人電子情報通信学会の論文
- 1995-01-25
著者
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Lee Sang
Dept. Of Orthop. Surg. Seoul Nat'l Univ.
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Park Song
Dept. Of Electrical Engineering Korea Advanced Institute Of Science And Technology
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Park Kyu
Dept. Of Electrical Engineering Korea Advanced Institute Of Science And Technology
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Lee Sang
Dept. Of E.n.t. School Of Medicine Kyungpook National University
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Lee S
Kaist Daejeon Kor
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Lee Sang
Dept. Chemical Eng. and Bio Process Eng. Res. Center, KAIST
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