Development of a RF Bipolar Transistor in a Standard 0.35μm CMOS Technology

スポンサーリンク

概要

• 論文の詳細を見る

• A RF Bipolar Transistor integrated to a standatd 0.35μm CMOS process is presented. This BiCMOS technology features a single-poly NPN transistor with simulated performance of f_T=16GHz and BV_<CEO>=6.4V. With implanted base and no trench isolation, this device offers full compatibility with standard CMOS technology at the cost of three additional mask layers, while demonstrates good performance compared to previously published BiCMOS technologies.

• 社団法人電子情報通信学会の論文
• 2001-06-30

著者

• Tamura Satoru

  Asahi Kasei Microsystems Co. Ltd.

• Takasuka Kaoru

  Asahi Kasei Microsystems Co. Ltd.

• Mok Philip

  Hong Kong University of Science & Technology, Elec.Engineering

• Saito Nobuo

  Asahi Kasei Microsystems Co., Ltd.

• Ng Wai

  University Of Toronto Dept.of Elec.& Comp.engineering

• Sun I-shan

  University Of Toronto Dept.of Elec.& Comp.engineering

• Mok Philip

  Hong Kong University Of Science & Technology Elec. Engineering

• Imai Hisaya

  Asahi Kasei Microsystems Co. Ltd.

• Shinomura Katsumi

  Asahi Kasei Microsystems Co. Ltd.

• Miyashita Kiyoshi

  Asahi Kasei Microsystems Co. Ltd.

• Mochizuki Hidenori

  Asahi Kasei Microsystems Co. Ltd.

• Ishikawa Akira

  Asahi Kasei Microsystems Co. Ltd.

関連論文

• An Image Rejection Mixer with AI-Based Improved Performance for WCDMA Applications(Analog Circuit and Device Technologies)
• Development of a RF Bipolar Transistor in a Standard 0.35μm CMOS Technology
• Development of a RF Bipolar Transistor in a Standard 0.35μm CMOS Technology
• Legal Families in Procedural Law
• Eigenheiten der Rechtsvergleichung im Zivilprozessrecht

スポンサーリンク