ED2000-53 / SDM2000-53 A Novel Integration Technology for Gigabit DRAM with 0.115μm Design Rule

概要

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A novel integration technology employing selective-epitaxial plug scheme prior to ILD1 and Pre-Poly Plug scheme for storage node contacts prior to ILD2 has been tested using E-Beam direct-writing tool. Shallow trench isolation and MIM capacitor scheme were adopted. Epi-Si plug selectively grown on active open areas reduce the contact resistance and improves its uniformity compared to conventional poly plug. Pre-poly-plug scheme for storage node contacts before ILD2 gapfill under COB type capacitor will have advantages in less thermal budget in ILD2 gapfill and reduced bitline capacitance.
社団法人電子情報通信学会の論文
2000-06-21