Column Reference 1T1C Ferroelectric Memory

概要

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Column reference 1T1C is introduced for providing stable reference level in ferroelectric memory, minimizing fatigue and achieving same electrical parameters with that of main memory cell. The column reference 1T1C is suitable for high reliable FeRAM of low power and high density. The major components of reference level shift tracer, sense amplifier and reference cell array are different from conventional 1T1C architecture.
社団法人電子情報通信学会の論文
1999-07-23