A 1.8GHz Driver Amp Design and Production DC Screening Techniques for RF Performances of Bipolar ICs

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概要

• 論文の詳細を見る

• A novel approach for DC screening of the monolithic silicon bipolar RFICs for noise figure (NF) and power gain (S_<21>) is presented. The proposed technique, which is applied to a 1.8 GHz driver amp, demonstrates excellent correlation between the resistance of a proposed r_b test structure and the NF and S_<21> of the RFIC. This study show that setting a limit on the base resistance of bipolar junction transistors (BJTs) is effective in screening the AC performances of any RFICs as well as transistors.

• 社団法人電子情報通信学会の論文
• 1999-07-22

著者

• Lee S‐g

  Information And Communications Univ. Daejeon Kor

• Lee Sang-gug

  Information And Communication University

• Lee Sang-Oh

  Samsung Electronics

• Ko Jin-Su

  Samsung Electronics

• Cho YunSeok

  Handong University

関連論文

• A 1.8GHz Driver Amp Design and Production DC Screening Techniques for RF Performances of Bipolar ICs
• A 1.8GHz Driver Amp Design and Production DC Screening Techniques for RF Performances of Bipolar ICs
• A 1.8GHz Driver Amp Design and Production DC Screening Techniques for RF Performances of Bipolar ICs
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