Thin gate SiC Schottky diode: Study on yield and Characterization for Sensor application (特集:化学センサ及び一般)
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概要
- 論文の詳細を見る
In this report deals with successful operation of Schottky diode fabricated in non-epitaxial SiC and epitaxial SiC. A Schottky diode with a thin gate formed by 80%Pt20%Pd alloy showed some sensitivity to 200 ppm of NO gas at high temperature. This response needs further investigation. Yield study shows that SiC has the promising quality for fabrication Schottky diode. Back contact resistance for Ni and anneal at 850℃ in vacuum was reliably low. Use of the epitaxial SiC gives reasonably low series resistance. High temperature characterization shows epitaxial SiC has better performance.
- 社団法人電子情報通信学会の論文
- 2000-06-16
著者
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KATSUBE Teruaki
Department of Information and Computer Science, Saitama University
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Katsube T
Saitama Univ. Saitama Jpn
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Katsube Teruaki
Guraduate School Of Science And Engineering Saitama University
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Katsube Teruaki
Department Of Information And Computer Science Saitama University
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Katsube Teruaki
Dept. Of Information And Computer Sciences Saitama University
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De Vasconcelos
Dapartmento De Fisica Universidae Federal De Pernambuco
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Khan Shabbir
Dept. Of Information And Computer Sciences Saitama University
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Zhang W.Y.
Dept. of Information and Computer Sciences, Saitama University
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Uchida H.
Dept. of Information and Computer Sciences, Saitama University
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Zhang W.y.
Dept. Of Information And Computer Sciences Saitama University
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