Effect of sputtering conditions on the exchange-biasing of NiFe/IrMn layers prepared by UHV-ICP sputtering system

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概要

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• We investigated the effect of the sputtering conditions on the propertics of Ni80Fe20 and Ir22Mn78 films prepared by UHV-ICP (Inductively Coupled Plasma) magnetron sputtering system. Higher Ar pressure, lower cathode power and longer target-substrate distance for RF sputtering of IrMn resulted in larger exchange bias field for the shucture glass/Ta (5nm)/NiFe (5nm)/IrMn (t_<IM>nm)/Ta (5nm). X-ray diffraction measurements showed that the exchange bias field depended on the spacing or lattice planes of IrMn. AFM observations showed that smaller coercivity of NiFe/IrMn were obtained for smaller grain diameter of IrMn. We obtained the maximum interfacial exchange coupling energy of 0.124erg/cm^2 for t_<IM> of 5nm. The blocking temperature of 260 and 320℃ were obtained for t_<IM> of 5 and 12.5nm respectively.

• 社団法人電子情報通信学会の論文
• 1999-02-25

著者

• Miyauchi Teiichi

  Research Center Sony Corporation

• Mizuguchi Tetsuya

  Research Center Sony Corporation

• Miyauchi T

  Research Center Sony Corporation

関連論文

• Effect of sputtering conditions on the exchange-biasing of NiFe/IrMn layers prepared by UHV-ICP sputtering system
• Effect of sputtering conditions on the exchange-biasing of NiFe/IrMn layers prepared by UHV-ICP sputtering system

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