Dependence of Magnetoresistance Characteristics of Spin Valve Type MR Element on Process Parameter

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概要

• 論文の詳細を見る

• We have investigated the effects of process parameters (buffer layer material/substrate, Ar pressure, sputtering power, and thickness of Cu interlayer) on the MR (magnetoresistance) characteristics of NiFe/Cu/NiFe/FeMn spin valve structures. The effects of interface topology of spin valve multilayers on the shape of magnetoresistance curves have been discussed. The result suggest that the control of interface topology by process parameters is crucial for the improvement of MR characteristics.

• 社団法人電子情報通信学会の論文
• 1995-11-24

著者

• Shin K.H.

  Div. of Metals, Korea Inst of Sci. & Tech

• Shin K

  Thin Film Technology Research Center Korea Institute Of Science And Technology

• Park C.-M.

  Div. of Metals, Korea Institute of Science and Technology

• Min K.-I.

  Div. of Metals, Korea Institute of Science and Technology

• Min K.-i.

  Div. Of Metals Korea Institute Of Science And Technology

• Park C.-m.

  Div. Of Metals Korea Institute Of Science And Technology

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• Dependence of Magnetoresistance Characteristics of Spin Valve Type MR Element on Process Parameter
• Dependence of Magnetoresistance Characteristics of Spin Valve Type MR Element on Process Parameter

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