Effect of doubly plasma oxidation time on TMR devices

スポンサーリンク

概要

• 論文の詳細を見る

• We fabricated MTJ devices that have doubly oxidized tunnel barrier using plasma oxidation method to form oxidized AlOx tunnel barrier. Doubly oxidation I , which sputtered 10 Å-bottom Al layer and oxidized it with oxidation time of 10 s. Subsequent sputtering of 13 Å-Al was performed and the metallic layer was oxidized for 50, 80, and 120 s, respectively. Doubly oxidation II, which sputtered 10 Å-bottom Al layer and oxidized it varying oxidation time for 30〜120 s. Subsequent sputtering of 13 Å-Al was performed and the metallic layer was oxidized for 210 sec. Doubly oxidation process specimen showed MR ratio of above 27 % in all experiment range. Singly oxidation process, 13 Å-Al layer and oxidized up to 210 s, showed less MR ratio and more narrow process window than those of doubly oxidation. Cross-sectional TEM images showed that doubly oxidized barrowers were thinner and denser than singly oxidized ones. XPS characterization confirmed that doubly oxidation prevented oxidation of Fe with bottom insulating layer. As a result, doubly oxidation could have superior MR ratio in process extent during long oxidation time because of preventing oxidation of bottom magnetic layer than singly oxidation.

• 社団法人電子情報通信学会の論文
• 2002-11-01

著者

• Song Ohsung

  The University Of Seoul

• Lee Kiyung

  The University of Seoul

• Song Obsung

  The University of Seoul

関連論文

• Transport properties in ferromagnetic double barrier junctions
• Effect of doubly plasma oxidation time on TMR devices (第7回アジア情報記録技術シンポジウム〔英文〕)
• Effect of doubly plasma oxidation time on TMR devices

スポンサーリンク