Effects of ion beam current density and substrate temperature on damage generation and activity in Si implanted GaAs.(Session A5 Compound Semiconductor Devices II)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Device

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概要

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• The extent of the damage introduced in GaAs by Si ion implantation and the activation efficiency of implanted Si are investigated by changing the beam current density of Si ion. The activation efficiency after annealing is enhanced by reducing ion beam current. RBS analysis revealed that the degrees of damage introduced is decreased by the reduction of the ion beam current density. The mechanism of these phenomena is attributed to the aggregate effect of the recovering velocity of generated damage at around room temperature and the fluence of ion bombardment during implantation. This hypothesis is supported by the results of the experiments by raising the substrate temperature during ion implantation.

• 2004-06-24

著者

• Suzuki T

  Fujitsu Lab. Ltd. Kanagawa Jpn

• Suzuki Toshiharu

  Advanced Technology Planning Sumitomo Eaton Nova Corporation

関連論文

• Effects of ion beam current density and substrate temperature on damage generation and activity in Si implanted GaAs.(Session A5 Compound Semiconductor Devices II)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Device
• Effects of ion beam current density and substrate temperature on damage generation and activity in Si implanted GaAs.(Session A5 Compound Semiconductor Devices II)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Device

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