ITO Thin Films Prepared by Magnetron Sputtering Method Using ITO Target : Effects of Plasma Conditions and Substrate Temperature on ITO Film Properties
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概要
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ITO (indium tin oxide) thin films have been prepared by the magnetron sputtering method. The effects of plasma conditions on ITO thin-film properties have been investigated by means of the Langmuir probe method. Furthermore, the effects of substrate temperature have been investigated. The following results were obtained : (1) Polycrystal ITO thin films were prepared at 40℃ substrate temperature. (2) High electron temperature (T_e) is necessary for ITO thin-film crystallization. (3) The magnetic field plays an important role in generating high-T_e plasma.
- 一般社団法人日本機械学会の論文
- 1995-02-15
著者
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Tsuda Yoshiyuki
Device Process Technology Research Laboratory Matsushita Electric Industrial Co. Ltd.
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Yasui Hideaki
Device Process Technology Research Laboratory, Matsushita Electric Industrial Co., Ltd.
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Yasui Hideaki
Device Process Technology Research Laboratory Matsushita Electric Industrial Co. Ltd.