Direct Bonding between Aluminum and Silicon by the Formation of Hydrogen Bonds

概要

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Direct bonding between aluminum and silicon was successfully achieved due to the formation of hydrogen bonds at the interface. The substrates were treated so that their surfaces were hydrophilic, then OH groups and water molecules were adsorbed onto their surfaces. Two hydrophilic treatments, a wet process and a dry process, were used. In the dry process, the adsorption of OH groups was achieved by bombardment with hydro-ions produced by passing steam through an ion source. The bonding efficiency of samples treated using the dry process was better than that of samples treated using the wet process and ranged from 30 to 90% when the heat treatment time was longer than 2 hours. Secondary ion mass spectrometry(SIMS) indicated the presence of oxygen and hydrogen adjacent to the bonding interface, and the formation of hydrogen bonds between them was confirmed using Fourier transform infrared reflection absorption spectroscopy(FTIR-RAS).
一般社団法人日本機械学会の論文
1997-10-15