Thermomechanical Response Analysis of Lithographic Mask Structure Using Finite Element Method
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概要
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The influence of heavy X-ray irradiation on the thermal and mechanical behavior of a silicon-tungsten (Si-W) mask structure in semiconductor microlithography was examined by numerical simulation. To approach the realistic physical conditions in X-ray lithographic exposure, a relatively large three-dimensional finite-element model with 6480 elements and 7760 grids was created to simulate the Si-W mask under thermal loading. The finite-element calculation was performed by using the commercially available MSC/NASTRAN program with IDEAS pre-post processor system on a powerful CONVEX C201 minisupercomputer. Investigations were focused on the temperature distributions, the thermal stress profiles, and the thermal displacement contour in the Si-W mask structure. The simulated results can provide both qualitative and quantitative information for optimal mask design to minimize in-plane thermal distortion.
- 1995-10-15
著者
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Sun Cherng-Yuan
Depart. of Electronics Engineering, National Taiwan Institute of Technology, R.O.C.
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Sun Cherng-yuan
Department Of Electronic Engineering National Taiwan Institute Of Technology
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Li Dz-chi
Department Of Electronic Engineering National Lienho College Of Technology And Commerce
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Chyuan Shiang-Woei
Chung Shan Institute of Science and Technology
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Chen Jeng-Tzong
Department of Harbor and River Engineering, National Taiwan Ocean University
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Chen Jeng-tzong
Department Of Harbor And River Engineering National Taiwan Ocean University
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