Thermomechanical Response Analysis of Lithographic Mask Structure Using Finite Element Method

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概要

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• The influence of heavy X-ray irradiation on the thermal and mechanical behavior of a silicon-tungsten (Si-W) mask structure in semiconductor microlithography was examined by numerical simulation. To approach the realistic physical conditions in X-ray lithographic exposure, a relatively large three-dimensional finite-element model with 6480 elements and 7760 grids was created to simulate the Si-W mask under thermal loading. The finite-element calculation was performed by using the commercially available MSC/NASTRAN program with IDEAS pre-post processor system on a powerful CONVEX C201 minisupercomputer. Investigations were focused on the temperature distributions, the thermal stress profiles, and the thermal displacement contour in the Si-W mask structure. The simulated results can provide both qualitative and quantitative information for optimal mask design to minimize in-plane thermal distortion.

• 1995-10-15

著者

• Sun Cherng-Yuan

  Depart. of Electronics Engineering, National Taiwan Institute of Technology, R.O.C.

• Sun Cherng-yuan

  Department Of Electronic Engineering National Taiwan Institute Of Technology

• Li Dz-chi

  Department Of Electronic Engineering National Lienho College Of Technology And Commerce

• Chyuan Shiang-Woei

  Chung Shan Institute of Science and Technology

• Chen Jeng-Tzong

  Department of Harbor and River Engineering, National Taiwan Ocean University

• Chen Jeng-tzong

  Department Of Harbor And River Engineering National Taiwan Ocean University

関連論文

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• Electron Emission Characteristics of Diamond-like Films Synthesized by Pulsed Laser Deposition Technique
• Thermomechanical Response Analysis of Lithographic Mask Structure Using Finite Element Method
• Infrared Spectroscopy of Hg_Zn_xTe Alloys

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