DETERMINATION OF GALLIUM DEPTH PROFILES IN SEMICONDUCTOR SILICON BY CHEMICAL ETCHING AND GRAPHITE FURNACE ATOMIC ABSORPTION SPECTROMETRY

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概要

• 論文の詳細を見る

• The semiconductor silicon surface Is etched by mixed-acid (HF, HNO_3, CH_3COOH) solution and gallium in the etched solution is determined by graphite furnace atomic absorption spectrometry using a zirconium impregnated graphite tube. The depth of the silicon layer was ascertained by determination of the silicon content in the etched solution by inductively-coupled plasma atomic emission spectrometry. This method permits determination of gallium up to 10^<16> atoms In 200 nm sections of silicon slice with a diameter of 2.5 cm.

• 社団法人日本分析化学会の論文
• 1984-01-05

著者

• Tsujii Kanji

  Central Research Laboratory Hitachi Ltd.

• KUGA^[○!R] Kazuo

  Central Research Laboratory,Hitachi Ltd.,

• OOYU Shizunori

  Central Research Laboratory,Hitachi Ltd.,

• KITAZUME Eiichi

  Central Research Laboratory,Hitachi Ltd.,

• Kitazume Eiichi

  Central Research Laboratory Hitachi Ltd.

• Kuga Kazuo

  Central Research Laboratory,Hitachi Ltd.,

関連論文

• DETERMINATION OF GALLIUM DEPTH PROFILES IN SEMICONDUCTOR SILICON BY CHEMICAL ETCHING AND GRAPHITE FURNACE ATOMIC ABSORPTION SPECTROMETRY

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