SPECTROPHOTOMETRIC DETERMINATION OF SILICON IN GALLIUM ARSENIDE AT μg/g LEVELS AFTER SEPARATION OF SILICON TETRAFLUORIDE BY DISTILLATION
スポンサーリンク
概要
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For the determination of silicon traces in gallium arsenide the sample is decomposed in a mixture constisting of HF/HNO_3/HClO_4 in a PTFE vessel. Silicon is separated from the matrix as SiF_4 which is collected in an absorbing solution consisting of boric acid, ammonium molybdate and amidosulfonic acid. By the addition of H_2O_2, As(III) is oxidised to As(V) thus avoiding co-volatilization of As(III) which interferes with the photometrical measurement. After addition of ascorbic acid the reduced silicomolybdic acid is determined at 830 nm using 2 cm cells. The detection limit was found to be 2 μg/g. The standard deviation at the 30 μg/g level was found to be 3.4 %.
- 1983-07-05
著者
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Kaiser G.
Max-planck-institut Fur Metallforschung Institut Fur Werkstoffwissenschaften Laboratorium Fur Reinst
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KIKUCHI Ryoji
On leave from General Technical Research Laboratory, Showa Denko K.K.
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TOLG G.
Max-Planck-Institut fur Metallforschung, Institut fur Werkstoffwissenschaften, Laboratorium fur Reinststoffe, Katharinenstr. 17,D-7070 Schwabisch Gmund und Institut fur Spektrochemie und Angewandte Spektroskopie, Bunsen-Kirchhoffstr. 11, D-4600 Dortmund
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Tolg G.
Max-planck-institut Fur Metallforschung Institut Fur Werkstoffwissenschaften Laboratorium Fur Reinststoffe Katharinenstr. 17 D-7070 Schwabisch Gmund Und Institut Fur Spektrochemie Und Angewandte Spektroskopie Bunsen-kirchhoffstr. 11 D-4600 Dortmund
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Kikuchi Ryoji
On Leave From General Technical Research Laboratory Showa Denko K.k.