Low-Pressure MOCVD of Fe_3O_4 Epitaxial Thin Films, and Their Surface Reaction Process

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概要

• 論文の詳細を見る

• The crystalline quality and deposition mechanism of iron oxide films prepared by metalorganic chemical vapor deposition (MOCVD) at low pressure were investigated. The films were deposited at substrate temperatures of above 673K. RHEED measurements showed that Fe_3O_4 thin films epitaxially grown on cplane sapphires have excellent crystal quality and extremely flat surfaces.The deposition process for the films was well explained by the Langmuir-Hinshelwood mechanism, in which an oxidization reaction occurs between molecules of an iron source and oxygen adsorbed onto the surface. These results suggested that atomic layer epitaxy of ferrite thin films may be achieved by alternately adsorbing the iron source and the oxygen.

• 社団法人日本磁気学会の論文
• 1998-04-15

著者

• Toba T

  Current Address:functional Devices Research Lab. Nec Corp

• Gomi M

  Department of Materials Science, Japan Advanced Institute of Science and Technology

• Gomi M

  Department Of Materials Science Japan Advanced Institute Of Science And Technology

• 五味 学

  Department of Materials Science, Japan Advanced Institute of Science and Technology

• 鳥羽 環

  Current address

関連論文

• Low-Pressure MOCVD of Fe_3O_4 Epitaxial Thin Films, and Their Surface Reaction Process

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