MRAM技術
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概要
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Magnetic random access memory (MRAM) with tunneling magnetoresistance devices has features such as non-volatility, high speed, low power, low operation voltage, and good durability. As a result, it is expected to be a strong candidate as a memory device for a future information technology society. Recently, several organizations have focused on developing MRAM. However, it has proved very difficult to produce the desired non-volatile memory on account of several key issues such as large programming current and variation of the tunneling oxide thickness. This article will review the features of MRAM, operation principles, applications, and several issues to be resolved.
- 社団法人日本磁気学会の論文
- 2003-04-01