時計用ICへのFAMOS技術の応用

概要

論文の詳細を見る
FAMOS (Floatinq Gate Avalanche Injection Metal Oxide Semiconductor), a non-volatile semiconductor memory device, applied to CMOS (Complementary MOS) watch IC is described here. The p-channel FAMOS when used in watch IC has some features as mentioned below; 1) As it has only one poly-silicon layer, the manufacturing process is simpler than that of the n-channel FAMOS. 2) In watch application, the operation speed is not so important. The p-channel FAMOS has enough speed as well as high stability for this application. 3) As 20 bits at most are usually built in a watch, it does not need so fine as the n-channel FAMOS in LSI memory. The p-channel FAMOS developed by the present authors has programming voltage as low as -10 to -15 volts. Further description are made mainly on the programming mechanism, erasing characteristic, and retention characteristic of this FAMOS device. The flow chart for manufacturing process of this p-channel FAMOS is given at the end. It has been proved that this device satisfies all the requirements of CMOS watch IC. Using this p-channel FAMOS, watch IC with high performance and high stability has been developed successfully.
社団法人日本時計学会の論文
1985-12-20