MULTILAYER HETEROEPITAXY FOR SEMICONDUCTOR LASERS(<Special Issue>Fundamentals of Vapour Growth and Epitaxy : Lecture Notes of the ICVGE-4 Specialists' School)
スポンサーリンク
概要
- 論文の詳細を見る
- 日本結晶成長学会の論文
- 1978-08-25
著者
-
Hayashi Izuo
Central Research Laboratories Nippon Electric Co. Lid.
-
Hayashi Izuo
Central Research Laboratories Nippon Electric Co. Ltd.
関連論文
- New Stripe Geometry Laser with High Quality Lasing Characteristics by Horizontal Transverse Mode Stabilization : A Refractive Index Guiding with Zn Doping
- Horizontal Mode Deformation and Anomalous Lasing Properties of Stripe Geometry Injection Lasers -Experiment
- Vapor Phase Growth of InGaAsP/InP DH Structures by the Dual-Growth-Chamber Method
- MULTILAYER HETEROEPITAXY FOR SEMICONDUCTOR LASERS(Fundamentals of Vapour Growth and Epitaxy : Lecture Notes of the ICVGE-4 Specialists' School)