イオン後方散乱法 : シリコン素子製造技術との関連(<特集>Growth and Characterization of Silicon Crystals)
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概要
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From the view point of silicon device technology, recent advances in application of ion backscattering to the silicon device processes are reviewed and systematized. Important progresses in silicon materials, diffusion and ion implantation, passivation and metallization are discussed in relationship with the targets for high performance semiconductor devices. The backscattering and channeling technology is briefly explained. Then, as an example of its contributions to the studies of silicon materials, gettering mechanism investigations of heavy metals, such as gold and cupper, are described, comparing "diffusion gettering" with "ion-damage gettering." Next, the backscattering studies of impurity doping are summarized. Particularly, keeping in mind arsenic-emitter high speed devices, the backscattering investigation results of the arsenic diffusion and implantation are discussed. Several examples of the backscattering and channeling analyses on the passivation materials, such as SiO_2, Si_3N_4, and Al_2O_3, are described. Especially, the spectra are discussed to determine depth dependence of the composition, density, total thickness, interface change and reaction, and moving species in such films. From the metallization view point, interdiffusions observed by backscattering and channeling technique are summarized for metal-metal and silicon-metal reactions. Especially, metal silicide reaction mechanisms are systematized, for reliable ohmic contact formation. Epitaxial growth of silicon layer obtained by solid-phase transport through PdSi layer has been studied by channeling measurement. Polycrystalline silicon-metal reactions also have been analyzed by backscattering spectra. It is concluded that the backscattering and channeling analysis technique can be used as a universal tool to investigate the silicon device manufacturing processes.
- 日本結晶成長学会の論文
- 1977-06-25
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関連論文
- イオン後方散乱法 : シリコン素子製造技術との関連(Growth and Characterization of Silicon Crystals)
- シリコン素子とイオン・ビーム後方散乱スペクトル
- シリコンデバイスの電極配線