CZシリコン結晶中の酸素析出の不均一(<特集>バルク成長)
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概要
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The inhomogeneity of oxygen precipitates in Czochralski-grown silicon crystals was studied with the X-ray double crystal method. The characteristics of oxygen precipitate distribution in a wafer were clarified as follows: (1) concentric circle patterns were related to growth striations (2) the precipitation rate was dependent on the distance from the wafer center (3) anomalous precipitation occurred near the wafer periphery We discovered that the main factors for the in-homogeneity are the fluctuation in oxygen atom concentration in (1), and the thermal history of the crystal in (2). Although some reseachers explain the formation mechanism of (3) with point defects, this is not sufficiently understood. However we found that the cause of in-homogeneous precipitation in (3) is the cooling rate in high temperature regions (>1200℃). As a result, in order to eliminate inhomogenous precipitations and to obtain a uniform oxygen precipitation in a wafer, we need to decrease the fluctuation in oxygen atom concentration along the growth striations, and to control the crystal cooling process.
- 日本結晶成長学会の論文
- 1991-02-15
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- CZシリコン結晶中の酸素析出の不均一(バルク成長)
- 高度平面波放射光トポグラフィによる薄いシリコン中の微小欠陥の検出
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