シリコン結晶の水素アニール効果

概要

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The effect of hydrogen anneal is summarized in concerning to improvement of CZ silicon crystal quality. By applying the hydrogen anneal at 1200℃ to the CZ silicon wafer, both grownin defects and OSF's (oxidation induced stacking faults) were perfectly eliminated in the surface and sub-surface. The BMD (bulk micro defect) can be controlled during the device manufacture process. In addition, the gate oxide formed on the hydrogen annealed wafer has superior properties comparing to that on the CZ wafer. The elimination mechanism of grown-in defect was discussed. That was due to surface reconstruction of the grown-in defect by surface atom migration. The surface atom migration strongly depends on the oxide film covered on the grownin defect surface. The covered oxide was reduced by hydrogen and perfectly disappeared in the region with under-saturated oxygen during hydrogen annealing.
日本結晶成長学会の論文
1999-07-15