SK2 シリコン結晶ウェーハ技術の最近の進歩
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概要
- 論文の詳細を見る
Progress in Si crystal and wafer technologies is discussed in terms of single crystal growth, wafer fabrication, epitaxial growth, gettering, 300mm and SOI.
- 日本結晶成長学会の論文
- 1999-07-01
Progress in Si crystal and wafer technologies is discussed in terms of single crystal growth, wafer fabrication, epitaxial growth, gettering, 300mm and SOI.