II_b-Vl_b族化合物半導体の昇華成長と化学量論的組成からの偏差の制御

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概要

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• Single crystals of some II_b-Vl_b binary compounds were grown by the sublimation method under an independently-controlled partial pressure of one of the constituent elements. By making clear the vaportransport mechanism as a function of transport parameters, the growth conditions effective for controlling the deviation from stoichiometry of the grown crystals was clarified. Simultaneous control of the composition x and the deviation y from stoichiometry for II_b-Vl_b ternary solid solutions such as Zn_<1+y> (S_xSe_<1-x>) and Cd_<1+y> (S_xSe_<1-x>) was attempted through the sublimation growth and the effectiveness of the new method was confirmed from electrical properties of the grown crystals.

• 日本結晶成長学会の論文
• 1987-02-25

著者

• 望月 勝美

  東北大学工学部材料植物学科

• 増水 剛

  東北大学工学部材料植物学科

関連論文

• II_b-Vl_b族化合物半導体の昇華成長と化学量論的組成からの偏差の制御
• CdSの気相輸送と化学量論組成からの偏差の調節
• CdTe結晶の腐食孔と極性の決定法

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