半導体シリコン結晶表面における塩化水素の化学反応機構(半導体薄膜・表面)
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概要
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In order to clarify the entire chemical process in silicon-chlorine-hydrogen system on silicon surface, this study evaluates the chemical reaction rate of hydrogen chloride to etch silicon surface, especially at very high concentration of hydrogen chloride gas.
- 日本結晶成長学会の論文
- 2003-07-05