融液シリコンからの結晶成長における固液界面での成長速度揺らぎとV/G : バルク結晶成長IV
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概要
- 論文の詳細を見る
By applying the point defect trapping model proposed by Webb to the Czochralski crystal growth from melted silicon with a assumption that the crystal-melt interface is diffuse, the growth rate fluctuations enable to incorporate nonequilibrium concentrations of the point defects into the crystal just below the crystal-melt interface. The change of predominat spicies of the point defects trapped in the crystal with variation of the magnitude of the growth rate fluctuations is possible.
- 日本結晶成長学会の論文
- 2002-07-01