EFG growth of Nd:GdVO_4 : interface morphology influence on radial dopant distribution

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概要

• 論文の詳細を見る

• Shaped rod-kike crystals of Nd-doped Gdv04 were grown by Edge-defined Film-fed Growth method. The axiai dopant distribution was found to be uniform, but the radial one depends on the development of faceted areas at growth interface and on the geometry of the die top and feeding capillary channels. The optimal die top design and growth conditions for high-quality homogeneously doped crystals are discussed.

• 日本結晶成長学会の論文
• 1997-07-01

著者

• B.m Epelbaum

  Inst.for Materials Research Tohoku Univ

• B.M Epelbaum

  IMR,Tohoku Univ

• shimamura K

  IMR,Tohoku Univ

• Uda S

  Mitsubishi Material Co,

• Mchida H

  Cichubu Onoda Cement Co

• Terada Y

  IMR,Tohoku Univ

• Fukuda T

  IMR,Tohoku Univ

• shimamura K

  Inst.for Materials Research,Tohoku Univ

• Uda S

  Mitsubishi Material Co

• Shimamura K

  Inst.for Materials Research Tohoku Univ

関連論文

• EFG growth of Nd:GdVO_4 : interface morphology influence on radial dopant distribution
• Accomplishment of inhomogcneous functional dopant distribution in micropulling-down crystals of Mn : LiNbO_3

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