InGaAlN エピタキシャル成長用基板およびその上のエピタキシャル成長(<小特集>格子不整合系のヘテロエピタキシー)

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概要

• 論文の詳細を見る

• The properties of substrate lattice-matching to InGaAlN, which has progressed in light emitting devices in the wavelength shorter than that of green light, and high-power transport devices operated at high temperature, are described. The lattice constant, crystal structure, cleavability and its direction of substrates is explained in comparison with InGaAlN. Of the sapphire substrates widely used at present, the (011^^-0) plane is shown to be the most suitable substrate commercially available. The GaN growth on a (0001) 6H-SiC substrate with polarity is introduced and the substrate polarity is described to severely affect the crystalline quality of an epitaxially grown film. This paper also reviews (101) NdGaO_3 and (111) MgAl_2O_4 as substrates nearly lattice-matched to GaN. The In_<0.22>Ga_<0.78>N on a house-made (0001) ZnO substrate is reported as the only attempt of lattice-matching growth in InGaAlN.

• 日本結晶成長学会の論文
• 1996-09-25

著者

• 松岡 隆志

  Ntt光エレクトロニクス研究所

関連論文

• InGaAlN エピタキシャル成長用基板およびその上のエピタキシャル成長(格子不整合系のヘテロエピタキシー)

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