INFLUENCE OF Al^<3+>IONS ON THE GROWTH CONDITIONS OF Dy_3(Ga_<1-X>Al_X)_5O_<12> SINGLE CRYSTALS.

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概要

• 論文の詳細を見る
• 日本結晶成長学会の論文
• 1994-07-05

著者

• Shimamura K.

  Institute for Materials Research, Tohoku University

• Fukuda T.

  Institute for Materials Research, Tohoku University

• Kochurikhin V.v.

  Institute For Materials Research Tohoku University

• Shimamura K.

  Institute For Materials Research Tohoku University

関連論文

• Floating Zone Growth of Silicon : Influence of the Induction Coil Design on the Melt-Solid Interface and on thermal Stresses
• Search for Superfluidity of ^3He in ^3He-^4He Solution : I. QUANTUM LIQUIDS AND SOLIDS : Liquid ^4He and ^3He-^4He
• INFLUENCE OF Al^IONS ON THE GROWTH CONDITIONS OF Dy_3(Ga_Al_X)_5O_ SINGLE CRYSTALS.
• A Monte Carlo Simulation Describing Melting Transition of Si-Type Structure in the Condensed Phase with BCC Lattice Model Including Many-Body Interactions
• The Correlation between Growth Stability and Superheating of the Melt in Semiconductor Compounds (融液成長における不安定性)

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