Effect of Pressure on the Magnetoresistance of the CeRh_2Si_2

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概要

• 論文の詳細を見る

• The magnetoresistance (MR) of single crystalline CeRh_2Si_2 has been measured at high pressure up to 2.3 GPa and at 4.2 K. At ambient pressure, the large MR has been observed. It is found that in a magnetic field dependence of MR, it shows a crossover near the critical pressure P_<C2> = 0.6 GPa, from H to a H^2 The magnitude of MR, ΔR(P, H= 9 T)/ R(P), shows a sudden decrease near P_<C2>, where the magnetic structure changes. These results are discussed on the basis of pressure induced quantum phase transition.

• 社団法人日本磁気学会の論文
• 2002-05-01

著者

• Ohashi M.

  Dept. Obst. and Gynec., Aichi Med. Univ.

• Uwatoko Y.

  Issp Univ. Of Tokyo

• Gomi G.

  Dept. Of Phys. Kyushu Univ.

• Koiwai S.

  Dept. of Phys., Saitama Univ.

• Koiwai S.

  Dept. Of Phys. Saitama Univ.

• Ohashi M.

  Dept. Obst. And Gynec. Aichi Medical Univ.

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