Magnetization Behavior of Synthetic Antiferromagnet and Toggle-Magnetoresistance Random Access Memory

スポンサーリンク

概要

• 論文の詳細を見る

• The magnetization behavior of antiferromagnetically coupled ferromagnetic bilayers with a uniaxial anisotropy is investigated analytically, with the aid of numeric calculation. Field trajectories giving a constant angle to the magnetization of one of the two layers, leaving the other as a variable in the in-plane field two-dimensional co-ordinate, and their envelopes are used to understand the magnetization behavior, including switching. These tools provide a good means of optimizing magnetic parameters to maximize the operating field margins of the recently proposed toggle-mode MRAM devices, including the thermal relaxation. Control of the especially low exchange coupling required for performance optimization is identified as a key technical issue, as well as increase of the operating field strength.

• 社団法人日本磁気学会の論文
• 2004-11-01

著者

• Wang S.-y.

  Mint Center And Department Of Physics And Astronomy University Of Alabama

• Fujiwara H.

  MINT Center and Department of Physics and Astronomy, University of Alabama

• Sun M.

  MINT Center and Department of Mathematics, University of Alabama

• Sun M

  Mint Center And Department Of Mathematics University Of Alabama

関連論文

• Magnetization Behavior of Synthetic Antiferromagnet and Toggle-Magnetoresistance Random Access Memory
• Magnetization Behavior of Synthetic Antiferromagnet and Toggle- MRAM

スポンサーリンク