Confined Current Path (CCP)-CPP Spin-Valve Structure: Preliminary Experiment and Two-Current Model Analysis

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A current-perpendicular-to-the-plane (CPP) spin-valve element structure specifically devised for high-density magnetic recording over 100 G bits/in^2, named a CCP-CPP spin valve, was studied both by experiment and by simulation. One or more current-confining (CC) layers are included in the structure so that its resistance may exhibit a high enough resistance to be applicable to read heads. A micro-structured sample with a nominal area of 50 um^2, fabricated by means of multi-step photolithography using a multilayer of Si/SiO_2 (200 nm)/Cu (150 nm) /CoFe (6 nm)/SiO_2 (0.3 nm)/Cu (3 nm)/CoFe (5 nm)/IrMn (15 nm)/Cu (50 nm), showed a high ΔR-value (the resistance change due to the GMR effect) of 10 mΩ, although the GMR ratio was only 0.25%. Simulation performed by using a combination of an equivalent resistor-network model and Mott's two-current model has suggested that insertion of a CC-layer on each side of the spacing conducting-layer would enhance both ΔR and the GMR ratio substantially.
2003-09-01