318 ペニング放電型エッチング・スパッタリング法による連続膜形成に関する研究(OS 薄膜特性)

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概要

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• Apparatus and method to perform etching and sputtering of continuous thin-film on substrate of various kinds by Penning discharge sputtering has benn developed and evaluated. The vacuum vessel has been composed of discharge chamber and specimen chamber. In this apparatus, selection of etching and sputtering modes are made by a change of anode position. Therefore, it has the features in which that it etches on the substrate first and deposits a thin film of the desire on the newly formed surface which continuously etches is possible. In this study, the glass was used for the substrate, and silver and copper were used as a sputtering material. The argon gas was used for the discharge. The relationship between the deposited film thickness for vapor deposition time and gas pressure was inbestigated.

• 一般社団法人日本機械学会の論文
• 2001-11-02

著者

• 中山 登史男

  山口東理大基礎工

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• 312 低環境負荷プロセスによる超高分子量ポリエチレン多孔質膜の形成と特性評価
• 318 ペニング放電型エッチング・スパッタリング法による連続膜形成に関する研究(OS 薄膜特性)

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