Transient Temperature Rise in Multi-chip Packages
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概要
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This paper describes a simulation model used to predict the transient temperature rise in multichip packages. The model was designed to consider not only heat conduction but also thermal radiation and natural convection as well as simplicity. The calculations were made with the designed model (MODEL 1), in addition to only a heat conduction model (MODEL 2). The experiments were performed for a ceramic substrate, which had capacitor chips. It had a 36 cm^2 surface area -32 watts heat flow rate. The calculation results with MODEL are in good agreement with the experimental data. However, the results with MODEL 2 are 10 percent higher than those with MODEL 1. It was found that MODEL 1 is very useful for high density multichip package thermal design.
- 一般社団法人日本機械学会の論文
著者
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ISHIZUKA Masaru
Research and Development Center, Toshiba Corp.
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Ishizuka Masaru
Research And Development Center Toshiba Corp.
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FUKUOKA Yoshitaka
Hybrid Functional Circuits Development Center, Toshiba Corp.
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Fukuoka Yoshitaka
Hybrid Functional Circuits Development Center Toshiba Corp.
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