Optimal Conditions for Achieving Strong Third-Order Nonlinearity in Semiconductor Cavities(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)

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概要

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• We determine the optimal conditions for achieving strong nonlinearity in semiconductor cavities as a function of the Q factor, coupling constant g, and longitudinal (γ_1) and pure transverse (γ_2) damping constants. The intensity of the third-order nonlinear field becomes maximum in the strong-coupling regime near the condition γ_1+2γ_2=ω_c/2Q, where ω_c is the cavity-quasimode frequency. However, the most effective optical Kerr effect can be realized in the intermediate-coupling regime. Both of the nonlinearities are enhanced significantly also in the weak-coupling regime satisfying ω_c/Q=(g^2/γ_1)[√<1+8γ_1/(γ_1+2γ_2)>-1], and their intensities depend only on the damping constants.

• 社団法人日本物理学会の論文
• 2005-11-15

著者

• Ajiki Hiroshi

  Department Of Materials Engineering Science Graduate School Of Engineering Science Osaka University

• Hiroshi Ajiki

  Department Of Materials Engineering Science Osaka University:crest Japan Science And Technology Corp

• AJIKI Hiroshi

  Department of Materials Engineering Science, Osaka University:CREST, Japan Science and Technology Corporation

関連論文

• Optimal Conditions for Achieving Strong Third-Order Nonlinearity in Semiconductor Cavities(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
• Entangled-Photon Generation in Biexcitonic Cavity QED(Electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid mechanics)
• Enhancement of Nonlinearity due to Cavity Effect of a Quantum Dot(Nanophotonics and Related Techniques)

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