ゾル-ゲル法によるPbTiO_3-PbO-B_2O_3ガラスセラミックス薄膜の作製
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概要
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PbTiO_3(PT)-PbO-B_2O_3 ferroelectric glass-ceramic thin films were produced by a sol-gel process. A pin-hole free thin film was obtained when it was prepared in a way that small PT crystals developed in a glass matrix using the RTA technique. The achievement of high PT content (>50 mol%) at levels unattainable by the conventional glass-ceramics preparation methods was semiquantitatively shown. PT crystallized at a temperature below 500℃. The dielectric properties of the 0.6PT-0.4(PbO・B_2O_3) film fired at 600℃ were ε=143, and tan δ=0.04.
- 社団法人日本セラミックス協会の論文
- 1996-10-01
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