Sr(Zr_<0.2>Ti_<0.8>)O_3誘電体薄膜の高周波スパッタリング合成

概要

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The chemical reaction to form dielectric thin films of Sr(Zr_<0.2>Ti_<0.8>)O_3 by an RF magnetron sputtering method using a ceramic target has been investigated. The amount of extracted Sr by water, Zr/Sr atomic ratio and the lattice constant in addition to other electric and optical characteristics of the film were measured to examine the progress of the reaction. As the results, the chemical reaction to form the perovskite type dielectric thin films with the composition described above was found to be well promoted in the sputtering conditions ; substrate temperatures above 450℃, sputtering gas pressure at 〜6 X 10^<-3> Torr, sputtering gas mixing ratio O_2/Ar of 〜3/1 , target-substrate distance of 50-60 mm, and sputtering power density at 〜4 W/ cm^2 obtaining the good electric and optical characteristics.
社団法人日本セラミックス協会の論文
1988-12-01