スパッタリング法による薄膜バリスタの作製

概要

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Sputtering technique was applied to fabricate nearly perfect double Schottky barrier as a model of a single grain boundary in a ceramic varistor. Donor density of ZnO and interface states were controlled in the ZnO(Al)/ZnO(Co)/PrCoO_x/ZnO(Co)/ZnO(Al) struc ture. In this multilayered thin-film varistor, the sym metric voltage current (V-I) characteristics (break down voltage〜6 V, α= 31) in bias directions were ob tained. From the deep level transient spectroscopy (DLTS) measurements, the interface state of 0.61 eV was detected.
社団法人日本セラミックス協会の論文
1994-03-01