粒界形半導体セラミックコンデンサにおける粒界絶縁層のキャラクタリゼーション
スポンサーリンク
概要
- 論文の詳細を見る
A microstructure of a barrier-layer capacitor with Bi_2O_3 diffused SrTiO_3 has been studied by means of SEM. TEM, and XPS. Samples for SEM observations were prepared by electrolytic etching, which allowed a visual characterization of insulating boundary layers. They were O_2-diffused layers wider than Bi-diffused layers, which observed as lattice-disorder region by TEM. Metal Bi was observed in addition to Bi_2O_3 by XPS. Barrier-layer model unique in case of Bi_2O_3 was investigated for oxygen supplyment from Bi. And we revealed it's propriety using standard free energy of metal oxide.
- 社団法人日本セラミックス協会の論文
- 1993-08-01