光ディスクメモリー用TeO_xーPd系非晶質薄膜の結晶化に及ぼすPdの添加効果

概要

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TeO_x-Pd thin films were studied for optical recording. Te_<48>Pd_<24>O_<28> in the system TeO_x-Pd had a high crystallization temperature and showed a large difference in transmittance between the amorphous and crystalline states. The crystallization of Te_<48>Pd_<24>O_<28> thin films took place stepwise in 4 stages at 150°, 270°, 326° and 365℃. The activation energies for the crystallization were 4.17, 2.84, 5.39, and 1.79 eV, respectively. The crystallization which plays a key role in the optical memory by laser irradiation was shown to be the first stage crystallization. The threshold laser power for crystallization was 9 mW for 50 ns irradiation. The Te_<48>Pd_<24>O_<28> thin films were found to be good optical memory materials of the so called "write-once" type showing high speed response and high stability.
社団法人日本セラミックス協会の論文
1990-05-01