化学溶液法によるPZT薄膜の作製と誘電特性

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Lead zirconate titanate(PZT) thin films with various compositions near the morphotropic phase boundary were prepared on Pt(111)/Ti/SiO_2/Si substrates using a chemical solution deposition(CSD) process. The formation conditions of the thin films with a single-phase perovskite were systematically investigated by varying the processing parameters. It was found that the PZT thin films pyrolyzed at 350-500℃ and then fired at 700 and 750℃ consisted of a single-phase perovskite, whereas a microcrystalline pyrochlore phase remained in the perovskite matrix when the thin films were fired at 600and650℃. No appreciable improvement in the dielectric and the ferroelectric properties was found by increasing firing temperature from 700 and 750℃, but the leakage current density of the thin film fired at 750℃ is about three orders of magnitude higher than that of the thin film fired at 700℃. The optimal firing temperature was determined to be 700℃, single-phase perovskite being obtained with optimum dielectric and ferroelectric properties as well as a low leakage current. The Pr are around 38-46, 30-40 and 25-30 μC/cm^2 and the coercive field to 141-192, 119-136 and 80-95 kV/cm, respectively, for the Pb(Zr_xTi<1-x>)O_3(x=0.45, 0.53 and 0.6) pyr01yzed at 350-500℃ for 3 min and then fired at 700℃. The orientation of the PZT thin film can be controlled by a pyrolysis process rather than by the firing temperature and the composition of the precursor solution. The PZT pyrolyzed at 400℃ tends to take <100>orientation, where as the counterpart pyrolyzed at 350, 450 and 500℃ have a strong <111> dominating orientation.
社団法人日本セラミックス協会の論文
2001-04-01

化学溶液法によるPZT薄膜の作製と誘電特性

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