28p-S-5 ENERGY DISTRIBUTION OF INTERFACE STATES IN THE BAND GAP OF GaAs REFLECTING DIFFERENT OXIDATION STAGES ON THE GaAs SURFACE DEVELOPED THROUGH AN ULTRA-THIN SILICON OVERLAYER DEPOSITION

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概要

• 論文の詳細を見る
• 社団法人日本物理学会の論文
• 1999-03-15

著者

• Kubota Tomohiro

  Inst Of Scientific And Industrial Research Osaka University

• Kobayashi Hikaru

  Inst.of Physics, Slovak Academy of Sciences

• Jan IVANCO

  Inst of Scientific and Industrial Research, Osaka University

• Jan Ivanco

  Inst Of Scientific And Industrial Research Osaka University

• Kobayashi Hikaru

  Inst.of Physics Slovak Academy Of Sciences : Inst Of Scientific And Industrial Research Osaka Univer

関連論文

• 28p-S-5 ENERGY DISTRIBUTION OF INTERFACE STATES IN THE BAND GAP OF GaAs REFLECTING DIFFERENT OXIDATION STAGES ON THE GaAs SURFACE DEVELOPED THROUGH AN ULTRA-THIN SILICON OVERLAYER DEPOSITION

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