26pYL-2 Effect of High Temperature RTA on the Oxgen precipitate formation and the COP dissolution
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概要
- 論文の詳細を見る
- 社団法人日本物理学会の論文
- 1999-09-03
著者
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Lee G.s.
Adavanced Semiconductor Material&device Development Center Hanyang University
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Park J.g.
Adavanced Semiconductor Material&device Development Center Hanyang University
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Park J.M.
Samsung Electronics Co.
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Ryu K.B.
Samsung Electronics Co.
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Park H.K.
Adavanced Semiconductor Material&Device Development Center, Hanyang University
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Park H.k.
Adavanced Semiconductor Material&device Development Center Hanyang University
関連論文
- 26pYL-4 COP Induced Isolation Failure in CZ Si Wafers
- 26pYL-3 Pure Silicon Wafers Grown by Czochralski Method
- 26pYL-2 Effect of High Temperature RTA on the Oxgen precipitate formation and the COP dissolution
- 26pYL-1 Characterization of Surface Defect on SIMOX Wafers