Transport Study of GaAs/AlGaAs Heterostructure-and n-Type GaAs-Devices in the 'Anti Hall Bar within a Hall Bar' Configuration
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概要
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The Hall-effect measurement technique is extended into rnultiply connected systems througha transport investigation of a dotrble-bottndary geometry fabricated on two-dimensional (2D)GaAs/AlGaAs heterostrtrctures and three-dimerrsional (3D) GaAs epilayers. The study beginswith the identification of a complement of the Hall bar ("anti Hall bar") which may be utilizedto generate a Hall effect within interior boundaries, when current is passed via interior contacts.Then, a double current technique is applied in the 'anti Hall bar within a Hall bar' configurationin order to demonstrate current compensation in the magnetoresistive voltages, and the super-position properties of Hall's efl'ect in 2D and 3D systerns. The experiments show that (i) theHall elect on a bottndary depends exclusively on the current injected via the same boundary,while (ii) the rnagnetoresistive voltages are insensitive to tlae origin of' the ctrrrent within thespecimen. The invariance of these features from the classical- to the quantum -limits suggestthat the bulk current is maintained under steady-state quantized Hall effect (QHF,) conditions,while the observation of dual simult?tneovrs qtranturn Hall plateaus provides a new perspectiveinto aspects of the 'gauge argument' thotrght exjcerirnent (R. B. Laughlin: Phys. Rev. B 23,5632 (1981)), by revealing sorrre peculiar changes in the Hall rneasurenaent Llp0l1 the applicationof 'periodic boundary conditions' in 2D cylinder type geornetries.
- 一般社団法人日本物理学会の論文
- 1996-06-15