Interface Impedance in Gels with Fractally Grown Copper Electrode

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概要

• 論文の詳細を見る

• Fractal growth of copper has been effected in a get medium of the system CuO -SiOz byelectrodeposition. The impedance of the cell comprising the fractal copper electrode and theget has been measured over the frequency range TOO to 2OOOkHz. The imaginary part of theimpedance shows a w " variation with n having values in the range 0.78 to 0.97 for samplesin which fractal growth of copper was carried out at different voltages. The contribution toconstant-phase-angle (CPA) behaviour is believed to arise due to migration of H" tons. Thevariation of the exponent n as a function of applied voltage for fractal growth is senai-oscillatoryin nature, Le Mehaute's relationship between n and the fractal dimension of electrode d( isobeyed in the present system.

• 社団法人日本物理学会の論文
• 1996-12-15

著者

• CHAKRAVORTY D.

  Indian Association for the Cultivation of Science

• D. Chakravorty

  Indian Association For The Cultivation Of Science:jawaharal Nehru Centre For Advanced Scientific Res

• S. BANDYOPADHYAY

  Indian Association for the Cultivation of Science

• Bandyopadhyay S.

  Indian Association for the Cultivation of Science

関連論文

• DC Conductivity in Barium Hexaferrites Doped with Bismuth Oxide
• AC Conducitivity in Bismuth-Substituted Barium Hexaferrites
• Dielectric Behaviour of Metal-Glass-Ceramic Nanocomposites Containing a Ferroelectric Phase
• Interface Impedance in Gels with Fractally Grown Copper Electrode
• AC Conduction Mechanism in Borate Glasses Containing Antimony and Arsenic Ions

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