Optical Conductivity in the Hubbard Model
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概要
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Frequency dependent conductivity crack) is calculated for the asymmetric Hubbard model inthe lirnit of strong correlations, U >t..(; , where tag are the hopping integrals for the lower(Q : p : 1) or the upper (ct : f3 : 2) Hubbard bands. By applying the memory functiontechnique in terms of the Htrbbard operators relaxation rates due to electron scattering onspin and charge dynamical fluctuations are calculated. A generalized Drude law for o(w) isobtained with essentially two contributions in the low frequency region (Drude part) and in thehigh frequency region, hc; '::: U. It is shown that the Drude relaxation rate is proportional to[(Z..)' -(712)'l' and goes to zero for the symmetric Hubbard model (t,.g = t) where o(c;) (X J(c;).It is suggested that for electronically doped copper oxides spin fluctuation relaxation rates shouldbe much weaker then for hole doped ones.
- 社団法人日本物理学会の論文
- 1996-12-15