Photoluminescence Spectroscopy of CdZnTe/CdTe Single Strained Quantum Wells

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概要

• 論文の詳細を見る

• We have grown strained Cd. .Zn..Te/CdTe single strained quantum welts bymolecular beam epitaxy. The Zn concentration was varied from 10 to 60% and thewell widths were systematically increased until the critical thickness was exceeded.Low-temperature (liquid helium) photoluminescence spectroscopy was used tocharacterize the films. The energy of the quantum well luminescence is consistent witha simple square well model when strain is included. The critical layer thickness for theCdTe quantum welts was found to be in agreement with the model of Matthews andBlakeslee.CdZnTe/ CdTe, quantum welts, photoluminescence, MBE

• 社団法人日本物理学会の論文
• 1991-12-15

著者

• J. L.

  Sandia National Laboratories

• JONES E.D.

  Sandia National Laboratories

• E. D.

  Sandia National Laboratories

• Reno J.L.

  Sandia National Laboratories

関連論文

• Optical Characterization of Si_C_x/Si(0≤x
• Photoluminescence Spectroscopy of CdZnTe/CdTe Single Strained Quantum Wells

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