Theory of Exchange Interaction Effects on Electronic States in Highly-Doped Low-Dimensional Structure Semiconductors

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概要

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• The previously developed theories of the impurity-doping effect on electronic statesin quasi-two and quansi-one dimensional structure serniconcluctors are extended totake into account the Coulomb-hole term in the exchange interaction. The theory isapplied to single-quantum-well and single-quantum-wire of nt-type GaAs embeddedin undoped GaAIAs, considering the conduction band. The effect of the Coulomb-hole term is to partially cancel the shift of the density of statc:s (DOS) toward higherenergy produced by the multi-site multiple impurity-scatterings. It is shown that theCoulomb-hole term effect in lower-dimension structures is as important as that in athree-dimensional structure.

• 社団法人日本物理学会の論文
• 1987-11-15

著者

• Takeshima Masumi

  Electronics Research Laboratory Matsushita Electronics Corporation

関連論文

• Theory of Exchange Interaction Effects on Electronic States in Highly-Doped Low-Dimensional Structure Semiconductors

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