Transient Photocurrents in Pyrene-TCNE Single Crystals. : I. Currents Controlled by Surface Layers
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概要
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Transient hole-photocurrents were measured in the direction perpendicular to c-plane of a pyrene-TCNE single crystal. In order to interpret behaviours of photoresponses to the applied voltage and the series resistance, a model, that the crystal has surface layers, where the density of carrier trapping- or recombination-centers is higher than that in a bulk, was proposed. This model explained satisfactorily the experimental results. Life times in the bulk, that in the surface layer and mobility of carriers were estimated to be about 10^<-6> sec, 10<-7> sec and 10^<-2> cm^2 V^<-1> sec^<-1> respectively.
- 社団法人日本物理学会の論文
- 1975-09-15
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関連論文
- Transit-Time Measurements of Photocarriers in Vapor-Grown Pyrene-TCNE Single Crystals
- Transient Photocurrents in Pyrene-TCNE Single Crystals
- Transient Photocurrents in Pyrene-TCNE Single Crystals. : II. Anisotropy of Drift Mobility
- Transient Photocurrents in Pyrene-TCNE Single Crystals. : I. Currents Controlled by Surface Layers